SSM3J14TTE85LF

Toshiba Semiconductor and Storage

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SSM3J14TTE85LF

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TSM

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MOSFET P-CH 30V 2.7A TSM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	413 pF @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	85mOhm @ 1.35A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TSM
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta)
Series	U-MOSII
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J14