SSM3J168F,LXHF

Toshiba Semiconductor and Storage

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SSM3J168F,LXHF

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S-Mini

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SMOS LOW RON VDS:-60V VGSS:+10/-

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.55Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	600mW (Ta)
Series	Automotive, AEC-Q101, U-MOSVI
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)