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SSM3J35MFV,L3F

Toshiba Semiconductor and Storage

Product No:

SSM3J35MFV,L3F

Package:

VESM

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 100MA VESM

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 12.2 pF @ 3 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8Ohm @ 50mA, 4V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package VESM
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 150mW (Ta)
Series -
Package / Case SOT-723
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Package Tape & Reel (TR)
Base Product Number SSM3J35