SSM3K106TU(TE85L)

Toshiba Semiconductor and Storage

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SSM3K106TU(TE85L)

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UFM

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Description:

MOSFET N-CH 20V 1.2A UFM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	310mOhm @ 600mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 100µA
Supplier Device Package	UFM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	π-MOSVI
Package / Case	3-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3K106