SSM3K15F,LF

Toshiba Semiconductor and Storage

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SSM3K15F,LF

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S-Mini

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MOSFET N-CH 30V 100MA S-MINI

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7.8 pF @ 3 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 100µA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	200mW (Ta)
Series	π-MOSIV
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM3K15