SSM3K16CT,L3F

Toshiba Semiconductor and Storage

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SSM3K16CT,L3F

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CST3

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MOSFET N-CH 20V 100MA CST3

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF @ 3 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 100µA
Supplier Device Package	CST3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	100mW (Ta)
Series	π-MOSIV
Package / Case	SC-101, SOT-883
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM3K16