SSM3K301T(TE85L,F)

Toshiba Semiconductor and Storage

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SSM3K301T(TE85L,F)

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TSM

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Description:

MOSFET N-CH 20V 3.5A TSM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	56mOhm @ 2A, 4V
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TSM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM3K301