SSM3K303T(TE85L,F)

Toshiba Semiconductor and Storage

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SSM3K303T(TE85L,F)

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TSM

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MOSFET N-CH 30V 2.9A TSM

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3.3 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	83mOhm @ 1.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.6V @ 1mA
Supplier Device Package	TSM
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta)
Series	π-MOSVII
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3K303