SSM3K341TU,LXHF

Toshiba Semiconductor and Storage

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SSM3K341TU,LXHF

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UFM

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Description:

AECQ MOSFET NCH 60V 6A SOT323F

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	36mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	UFM
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta)
Series	Automotive, AEC-Q101, U-MOSVIII-H
Package / Case	3-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)