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SSM3K35CT,L3F

Toshiba Semiconductor and Storage

Product No:

SSM3K35CT,L3F

Package:

CST3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 20V 180MA CST3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 9.5 pF @ 3 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package CST3
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 100mW (Ta)
Series -
Package / Case SC-101, SOT-883
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 180mA (Ta)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V
Package Tape & Reel (TR)
Base Product Number SSM3K35