SSM3K7002KF,LXHF

Toshiba Semiconductor and Storage

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SSM3K7002KF,LXHF

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S-Mini

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SMOS NCH I: 0.4A, V: 60V, P: 270

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5Ohm @ 100mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 250µA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	270mW (Ta)
Series	Automotive, AEC-Q101
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)