SSM5H16TU,LF

Toshiba Semiconductor and Storage

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SSM5H16TU,LF

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Package:

UFV

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Description:

MOSFET N-CH 30V 1.9A UFV

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Operating Temperature	150°C
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	1.9 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	133mOhm @ 1A, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	UFV
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	500mW (Ta)
Series	U-MOSIII
Package / Case	6-SMD (5 Leads), Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM5H16