SSM6J507NU,LF

Toshiba Semiconductor and Storage

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SSM6J507NU,LF

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6-UDFNB (2x2)

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Description:

MOSFET P-CH 30V 10A 6UDFNB

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	20.4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	6-UDFNB (2x2)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.25W (Ta)
Series	U-MOSVI
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6J507