SSM6K819R,LF

Toshiba Semiconductor and Storage

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SSM6K819R,LF

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Package:

6-TSOP-F

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Description:

N-CH MOSFET, 100 V, 10 A, 0.0258

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25.8mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	6-TSOP-F
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.5W (Ta)
Series	Automotive, AEC-Q101
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6K819