SSM6P16FE(TE85L,F)

Toshiba Semiconductor and Storage

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SSM6P16FE(TE85L,F)

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Package:

ES6

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Description:

MOSFET P-CH 20V 0.1A ES6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	11 pF @ 3 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	ES6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	150mW (Ta)
Series	-
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Package	Cut Tape (CT)
Base Product Number	SSM6P16