TK100E08N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK100E08N1,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 80V 100A TO220

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.2mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	255W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK100E08