TK125V65Z,LQ

Toshiba Semiconductor and Storage

Product No:

TK125V65Z,LQ

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Package:

4-DFN-EP (8x8)

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Description:

MOSFET N-CH 650V 24A 5DFN

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.02mA
Supplier Device Package	4-DFN-EP (8x8)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	190W (Tc)
Series	DTMOSVI
Package / Case	4-VSFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	24A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK125V65