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TK12A50E,S5X

Toshiba Semiconductor and Storage

Product No:

TK12A50E,S5X

Package:

TO-220SIS

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 500V 12A TO220SIS

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 520mOhm @ 6A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1.2mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 45W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK12A50