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TK155U65Z,RQ

Toshiba Semiconductor and Storage

Product No:

TK155U65Z,RQ

Package:

TOLL

Batch:

-

Datasheet:

-

Description:

DTMOS VI TOLL PD=150W F=1MHZ

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1635 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 155mOhm @ 9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 730µA
Supplier Device Package TOLL
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 150W (Tc)
Series DTMOSVI
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)