TK16G60W,RVQ

Toshiba Semiconductor and Storage

Product No:

TK16G60W,RVQ

Manufacturer:

Package:

D2PAK

Batch:

Datasheet:

Description:

MOSFET N CH 600V 15.8A D2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 790µA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	130W (Tc)
Series	DTMOSIV
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK16G60