TK1K2A60F,S4X

Toshiba Semiconductor and Storage

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TK1K2A60F,S4X

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Package:

TO-220SIS

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Description:

MOSFET N-CH 600V 6A TO220SIS

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 630µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	35W (Tc)
Series	U-MOSIX
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK1K2A60