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TK35E08N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK35E08N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 80V 55A TO220

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 300µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 72W (Tc)
Series U-MOSVIII-H
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK35E08