TK3R3E08QM,S1X

Toshiba Semiconductor and Storage

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TK3R3E08QM,S1X

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Package:

TO-220

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Description:

UMOS10 TO-220AB 80V 3.3MOHM

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.3mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1.3mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	230W (Tc)
Series	U-MOSX-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube