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TK40P03M1(T6RDS-Q)

Toshiba Semiconductor and Storage

Product No:

TK40P03M1(T6RDS-Q)

Package:

DPAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 40A DPAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.8mOhm @ 20A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 100µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) -
Series U-MOSVI-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TK40P03