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TK4P55DA(T6RSS-Q)

Toshiba Semiconductor and Storage

Product No:

TK4P55DA(T6RSS-Q)

Package:

D-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 550V 3.5A DPAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.45Ohm @ 1.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 1mA
Supplier Device Package D-Pak
Drain to Source Voltage (Vdss) 550 V
Power Dissipation (Max) 80W (Tc)
Series π-MOSVII
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK4P55