TK5P60W5,RVQ

Toshiba Semiconductor and Storage

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TK5P60W5,RVQ

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DPAK

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Description:

PB-F POWER MOSFET TRANSISTOR DPA

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	11.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	990mOhm @ 2.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 230µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	60W (Tc)
Series	DTMOSIV
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)