TK60D08J1(Q)

Toshiba Semiconductor and Storage

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TK60D08J1(Q)

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Package:

TO-220(W)

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Description:

MOSFET N-CH 75V 60A TO220

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.8mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 1mA
Supplier Device Package	TO-220(W)
Drain to Source Voltage (Vdss)	75 V
Power Dissipation (Max)	140W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK60D08