TK60F10N1L,LXGQ

Toshiba Semiconductor and Storage

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TK60F10N1L,LXGQ

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TO-220SM(W)

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Description:

MOSFET N-CH 100V 60A TO220SM

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4320 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.11mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 500µA
Supplier Device Package	TO-220SM(W)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	205W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK60F10