TK60S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

Product No:

TK60S06K3L(T6L1,NQ

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DPAK+

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Description:

MOSFET N-CH 60V 60A DPAK

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	DPAK+
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	88W (Tc)
Series	U-MOSIV
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK60S06