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TK62Z60X,S1F

Toshiba Semiconductor and Storage

Product No:

TK62Z60X,S1F

Package:

TO-247-4L(T)

Batch:

-

Datasheet:

-

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 40mOhm @ 21A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 3.1mA
Supplier Device Package TO-247-4L(T)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 400W (Tc)
Series -
Package / Case TO-247-4
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK62Z60