TK65G10N1,RQ

Toshiba Semiconductor and Storage

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TK65G10N1,RQ

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Package:

D2PAK

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Description:

MOSFET N-CH 100V 65A D2PAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 32.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	156W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK65G10