TK6Q65W,S1Q

Toshiba Semiconductor and Storage

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TK6Q65W,S1Q

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I-Pak

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MOSFET N-CH 650V 5.8A IPAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.05Ohm @ 2.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 180µA
Supplier Device Package	I-Pak
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	60W (Tc)
Series	DTMOSIV
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK6Q65