TK6R9P08QM,RQ

Toshiba Semiconductor and Storage

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TK6R9P08QM,RQ

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DPAK

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Description:

UMOS10 DPAK 80V 6.9MOHM

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.9mOhm @ 31A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 500µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	89W (Tc)
Series	U-MOSX-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)