TK7A80W,S4X

Toshiba Semiconductor and Storage

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TK7A80W,S4X

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Package:

TO-220SIS

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Description:

PB-F POWER MOSFET TRANSISTOR TO-

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	950mOhm @ 3.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 280µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	35W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube