TK7R7P10PL,RQ

Toshiba Semiconductor and Storage

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TK7R7P10PL,RQ

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DPAK

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Description:

X35 PB-F POWER MOSFET TRANSISTOR

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.7mOhm @ 27.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	93W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK7R7P10