TK8Q60W,S1VQ

Toshiba Semiconductor and Storage

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TK8Q60W,S1VQ

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I-Pak

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MOSFET N-CH 600V 8A IPAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	18.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 400µA
Supplier Device Package	I-Pak
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	80W (Tc)
Series	DTMOSIV
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK8Q60