TK90S06N1L,LQ

Toshiba Semiconductor and Storage

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TK90S06N1L,LQ

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DPAK+

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Description:

MOSFET N-CH 60V 90A TO252-3

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.3mOhm @ 45A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Supplier Device Package	DPAK+
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	157W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	90A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TK90S06