TPC6006-H(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

TPC6006-H(TE85L,F)

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Package:

VS-6 (2.9x2.8)

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Description:

MOSFET N-CH 40V 3.9A VS-6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	251 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 1.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 1mA
Supplier Device Package	VS-6 (2.9x2.8)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	700mW (Ta)
Series	U-MOSIII-H
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC6006