TPC8111(TE12L,Q,M)

Toshiba Semiconductor and Storage

Product No:

TPC8111(TE12L,Q,M)

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Package:

8-SOP (5.5x6.0)

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Description:

MOSFET P-CH 30V 11A 8SOP

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	5710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 5.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	8-SOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC8111