TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

Product No:

TPC8A06-H(TE12LQM)

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Package:

8-SOP (5.5x6.0)

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Description:

MOSFET N-CH 30V 12A 8SOP

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Operating Temperature	-
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.1mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 1mA
Supplier Device Package	8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	-
Series	-
Package / Case	8-SOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC8A06