TPCC8104,L1Q(CM

Toshiba Semiconductor and Storage

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TPCC8104,L1Q(CM

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8-TSON Advance (3.1x3.1)

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Description:

MOSFET P-CH 30V 20A 8TSON

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 500µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 27W (Tc)
Series	U-MOSVI
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Vgs (Max)	+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPCC8104