TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

Product No:

TPCF8B01(TE85L,F,M

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Package:

VS-8 (2.9x1.5)

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Description:

MOSFET P-CH 20V 2.7A VS-8

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	110mOhm @ 1.4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 200µA
Supplier Device Package	VS-8 (2.9x1.5)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	330mW (Ta)
Series	U-MOSIII
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPCF8B01