TPH2R805PL,LQ

Toshiba Semiconductor and Storage

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TPH2R805PL,LQ

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Package:

8-SOP Advance (5x5)

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Description:

PB-F POWER MOSFET TRANSISTOR SOP

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5175 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 500µA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	45 V
Power Dissipation (Max)	830mW (Ta), 116W (Tc)
Series	U-MOSIX-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)