TPH3R10AQM,LQ

Toshiba Semiconductor and Storage

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TPH3R10AQM,LQ

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8-SOP Advance (5x5.75)

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100V U-MOS X-H SOP-ADVANCE(N) 3.

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.1mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 500µA
Supplier Device Package	8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3W (Ta), 210W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	180A (Ta), 120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPH3R10