TPH4R50ANH1,LQ

Toshiba Semiconductor and Storage

Product No:

TPH4R50ANH1,LQ

Manufacturer:

Package:

8-SOP Advance (5x5.75)

Batch:

Datasheet:

Description:

MOSFET 100V 4.5MOHM SOP-ADV(N)

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 46A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	800mW (Ta)
Series	U-MOSVIII-H
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)