TPH4R50ANH,L1Q

Toshiba Semiconductor and Storage

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TPH4R50ANH,L1Q

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Package:

8-SOP Advance (5x5)

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Description:

MOSFET N CH 100V 60A SOP ADV

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.6W (Ta), 78W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TPH4R50