TPH7R006PL,L1Q

Toshiba Semiconductor and Storage

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TPH7R006PL,L1Q

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Package:

8-SOP Advance (5x5)

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Description:

MOSFET N-CH 60V 60A 8SOP

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1875 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13.5mOhm @ 10A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 200µA
Supplier Device Package	8-SOP Advance (5x5)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	81W (Tc)
Series	U-MOSIX-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPH7R006