TPHR6503PL1,LQ

Toshiba Semiconductor and Storage

Product No:

TPHR6503PL1,LQ

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Package:

8-SOP Advance (5x5.75)

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Description:

UMOS9 SOP-ADV(N) PD=210W F=1MHZ

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.65mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 1mA
Supplier Device Package	8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	960mW (Ta), 210W (Tc)
Series	U-MOSIX-H
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)