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TPHR9003NL1,LQ

Toshiba Semiconductor and Storage

Product No:

TPHR9003NL1,LQ

Package:

8-SOP Advance (5x5.75)

Batch:

-

Datasheet:

-

Description:

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 1mA
Supplier Device Package 8-SOP Advance (5x5.75)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 800mW (Ta), 170W (Tc)
Series U-MOSVIII-H
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)