TPN1110ENH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN1110ENH,L1Q

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Package:

8-TSON Advance (3.1x3.1)

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Description:

MOSFET N-CH 200V 7.2A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	114mOhm @ 3.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 200µA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Series	U-MOSVIII-H
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TPN1110